MG100J6ES50 데이터 시트보기 (PDF) - Toshiba
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MG100J6ES50 Datasheet PDF : 6 Pages
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Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc=25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
600
V
±20
V
100
A
200
100
A
200
450
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
2/3
N·m
MG100J6ES50
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Symbol
IGES
ICES
VGE (off)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
VF
trr
Rth (j-c)
Test Condition
Min
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 10mA, VCE = 5V
IC = 100A, VGE = 15V
VCE = 10V, VGE = 0,
f = 1MHz
Inductive load
VCC = 300V
IC = 100A
VGE = ±15V
RG = 13Ω
IF = 100A, VGE = 0
IF = 100A, VGE = −10V
di / dt = 100A / µs
Transistor
Diode
―
―
5.0
―
―
―
―
―
―
(Note 1) ―
―
―
―
―
―
Typ. Max Unit
― ±500 nA
―
1.0 mA
7.0
8.0
V
2.10 2.70
V
9000 ―
pF
0.08 0.16
0.12 0.24
0.40 0.80
µs
0.20 0.40
0.15 0.30
0.50 1.00
2.30 3.00
V
0.08 0.15 µs
― 0.28
°C / W
― 0.69
2001-02-22 2/6
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