MG100J1ZS40 데이터 시트보기 (PDF) - Toshiba
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MG100J1ZS40 Datasheet PDF : 6 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG100J1ZS40
High Power Switching Applications
Motor Control Applications
MG100J1ZS40
Unit: mm
l High input impedance
l High spee
: tf = 0.35µs (max)
trr = 0.15µs (max)
l Low saturation voltage
: VCE (sat) = 3.5V (max)
l Enhancement-mode
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
JEDEC
JEITA
TOSHIBA
Weight: 202g
Symbol
Rating
Unit
VCES
VGES
VR
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
600
V
±20
V
600
V
100
A
200
100
A
200
400
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
―
―
2-94D2A
1
2001-08-16
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