SST38VF166-70-4C-EK 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST38VF166-70-4C-EK

16 Megabit FlashBank Memory

Silicon Storage Technology 

16 Megabit FlashBank Memory

SST38VF166

Data Sheet

TABLE 18: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

100

µs

100

µs

T18.1 327

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 19: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

12 pF

6 pF

T19.1 327

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 20: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units

Test Method

NEND1

Endurance - Flash Bank

Endurance - E2 Bank

10,000

100,000

Cycles/Sector JEDEC Standard A117

Cycles/Word

TDR1

Data Retention

100

Years

JEDEC Standard A103

VZAP_HBM1

ESD Susceptibility

Human Body Model

2000

Volts

JEDEC Standard A114

VZAP_MM1

ESD Susceptibility

Machine Model

200

Volts

JEDEC Standard A115

ILTH1

Latch Up

100 + IDD

mA

JEDEC Standard 78

T20.0 327

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

16

327-3 2/01

S71065

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