MAX4100 데이터 시트보기 (PDF) - Maxim Integrated
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MAX4100 Datasheet PDF : 12 Pages
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500MHz, Low-Power Op Amps
RI
RF
IB-
MAX41000
RS
IB+ MAX4101
In both DC and noise calculations, errors are dominat-
ed by offset voltage and noise voltage (rather than by
input bias current or noise current).
Metal-film resistors with leads are manufactured using
a thin-film process, where resistive material is deposit-
ed in a spiral layer around a ceramic rod. Although the
materials used are noninductive, the spiral winding pre-
sents a small inductance (about 5nH) that may have an
adverse effect on high-frequency circuits.
VOUT
Figure 3. Output Offset Voltage
c) Total output-referred noise voltage is shown by the
equation below (en(OUT)):
( ) ( ) en(OUT)
=
1+
RF
RG
2inRS 2 + eN 2
The MAX4100/MAX4101, with two high-impedance inputs,
have low 8nV√Hz voltage noise and only 0.8pA√Hz current
noise.
An example of DC error calculations, using the
MAX4100/MAX4101 typical data and the typical operating
circuit with RF = RG = 200Ω (RS = 100Ω), gives:
( ) VOUT = IOSRS + VOS
1+
RF
RG
( ) VOUT
=
3
×
10
−6
× 102
+
1
×
10−3
1+1
VOUT = 2.6mV
Calculating total output-referred noise in a similar man-
ner yields:
( ) en(OUT) = 1+ 1
2
×
0.8
× 10−12
× 100 2
+
8
×
10−9
2
en(OUT) = 8nV / Hz
With a 200MHz system bandwidth, this calculates to
133µVRMS (approximately 679µVp-p).
10
8 RS = 0Ω
6
CL = 10pF
4
2
0
-2
CL = 5pF
-4
-6
CL = 0pF
-8
-10
0.1M 1M
10M
100M
1G
FREQUENCY (Hz)
Figure 4a. MAX4100 Bandwidth vs. Capacitive Load
10
8
CL = 10pF
6
4
2
0
-2
-4
RS = 22Ω
-6
RS = 10Ω
-8
RS = 4.7Ω
RS = 2.2Ω
-10
0.1M
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 4b. MAX4100 Bandwidth vs. Capacitive Load and
Isolation Resistor
10 ______________________________________________________________________________________
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