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MAS5104CB

RADIATION HARD 4096 x 1 BIT STATIC RAM

Zarlink Semiconductor Inc 

AMPRAIL51190945

MA5104

RADIATION HARD 4096 x 1 BIT STATIC RAM

DS3580-3.2

The MA5104 4k Static RAM is configured as 4096 x 1 bits and

manufactured using CMOS-SOS high performance, radiation hard,

3µm technology.

The device has separate input and output terminals controlled by

Chip Select and Write Enable. The design uses a 6 transistor cell and

has full static operation with no clock or timing strobe required.

Address input buffers are deselected when Chip Select is in the HIGH

state.

Operation Mode CS WE I/O Power

Read

Write

Standby

L H D OUT

L L D IN

H X High Z

ISB1

ISB2

Figure 1: Truth Table

FEATURES

s 3µm CMOS-SOS Technology

s Latch-up Free

s Fast Access Time 90ns Typical

s Total Dose 106 Rad(Si)

s Transient Upset >1010 Rad(Si)/sec

s SEU <10-10 Errors/bitday

s Single 5V Supply

s Three State Output

s Low Standby Current 10µA Typical

s -55°C to +125°C Operation

s All Inputs and Outputs Fully TTL or CMOS

Compatible

s Fully Static Operation

Figure 2: Block Diagram

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