M12GZ47 데이터 시트보기 (PDF) - Toshiba
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M12GZ47 Datasheet PDF : 5 Pages
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SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
II
Gate Trigger Voltage
III
IV
I
SM12GZ47
II
SM12JZ47
III
Gate Trigger
IV
Current
I
SM12GZ47A
II
SM12JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of Off−State
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of Off−State
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
―
―
20
µA
T2 (+) , Gate (+) ―
―
1.5
VGT
VD = 12V,
RL = 20Ω
T2 (+) , Gate (−) ―
―
1.5
V
T2 (−) , Gate (−) ―
―
1.5
T2 (−) , Gate (+) ―
―
―
T2 (+) , Gate (+) ―
―
30
T2 (+) , Gate (−) ―
―
30
T2 (−) , Gate (−) ―
―
30
IGT
VD = 12V,
RL = 20Ω
T2 (−) , Gate (+) ―
―
―
mA
T2 (+) , Gate (+) ―
―
20
T2 (+) , Gate (−) ―
―
20
T2 (−) , Gate (−) ―
―
20
T2 (−) , Gate (+) ―
―
―
VTM
VGD
IH
Rth (j−c)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.0 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
―
300
―
V / µs
―
200
―
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = − 6.5A / ms
10
―
―
V / µs
4
―
―
MARKING
*NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
SM12GZ47, SM12GZ47A
*2
TYPE
SM12JZ47, SM12JZ47A
*3
SM12GZ47A, SM12JZ47A
MARK
M12GZ47
M12JZ47
A
Example
*4
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10
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