SM12JZ47 데이터 시트보기 (PDF) - Toshiba
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SM12JZ47 Datasheet PDF : 5 Pages
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SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 12A
l High Commutating (dv / dt)
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
R. M. S. On−tate Current
(Full Sine Waveform TC = 72°C)
VDRM
IT (RMS)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VIsol
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM ≤ 17A
tgw ≥ 10µs
tgr ≤ 250ns
igp = IGT × 2.0
1
2001-07-10
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