LCP150S 데이터 시트보기 (PDF) - STMicroelectronics
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LCP150S Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERITICS (Tamb = 25°C, unless otherwise specified)
Symbol
Parameter
IGT Gate Trigger Current
IH Holding Current
IR Reverse Leakage Current LINE/GND
IRG Reverse Leakage Current GATE/LINE
VR Reverse Voltage LINE/GND
VF Forward Voltage LINE/GND
VGT Gate Trigger Voltage
VFP Peak Forward Voltage LINE/GND
VSGL Dynamic Switching Voltage
GND/LINE
Vgate GATE/GND Voltage
VLG LINE/GND Voltage
C Off State Capacitance LINE/GND
VSGL
VR
I
IF
VF
IR
IH
Ipp
LCP150S
VGL
1 - PARAMETERS RELATED TO THE DIODE LINE/GND
Symbol
Test Conditions
VF Square pulse, Tp = 500 µs, IF = 5 A
VFP Ipp = 40 A, 10/1000 µs.
Max.
Unit
3
V
15
V
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
IGT
IH
VGT
IRG
VSGL
VGND/LINE = -48 V
VGATE= -48 V
at IGT
Tc = 25°C
Tc = 70°C
VGATE= -48 V
Tests Conditions
Note 2
VRG = -75 V
VRG = -75 V
Note 2
Min. Max. Unit
0.2
15
mA
150
mA
2.5
V
5
µA
50
µA
- 63
V
3 - PARAMETERS RELATIVE TO DIODE AND PROTECTION THYRISTOR
Symbol
Tests Conditions
IR
Tc = 25°C
Tc = 70°C
-1 < VGL < -Vbat VR = - 85 V
-1 < VGL < -Vbat VR = - 85 V
C
VR = - 3 V
VR = - 48 V
F < 1MHz
F < 1MHz
Note 2 : See test circuit for IH and VSGL.
Min.
Max.
5
50
150
80
Unit
µA
µA
pF
pF
3/6
®
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