HN7G02FU 데이터 시트보기 (PDF) - Toshiba

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HN7G02FU

TOSHIBA Multi Chip Discrete Device

Toshiba 

TOSHIBA Multi Chip Discrete Device

HN7G02FU

HN7G02FU

Power Management Switch Application, Inverter Circuit

Application, Driver Circuit Application and Interface

Circuit Application.

Unit: mm

Q1 (transistor): RN2110 Equivalent

Q2 (MOS-FET): 2SK1830 Equivalent

Q1 (Transistor) Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

Rating

Unit

−50

V

−50

V

−5

V

−100

mA

Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Gate-source voltage

DC drain current

Symbol

VDS

VGSS

ID

Rating

Unit

20

V

10

V

50

mA

JEDEC

―

JEITA

―

TOSHIBA

―

Weight: g (typ.)

Q1, Q2 Common Ratings (Ta = 25°C)

Marking

Characteristics

Symbol

Rating

Unit

Collector power dissipation

PC

(Note 1)

200

mW

Junction temperature

Tj

150

°C

FT

Storage temperature range

Tstg

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating Equivalent Circuit (top view)

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

654

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

Q1

Q2

etc).

Note 1: Total rating

123

1

2007-11-01

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