HN7G02FU(2003) 데이터 시트보기 (PDF) - Toshiba

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HN7G02FU
(Rev.:2003)

TOSHIBA Multi Chip Discrete Device

Toshiba 

TOSHIBA Multi Chip Discrete Device

HN7G02FU

Power Management Switch Application, Inverter Circuit

Application, Driver Circuit Application and Interface

Circuit Application.

HN7G02FU

Unit: mm

Q1 (transistor): RN2110 Equivalent

Q2 (MOS-FET): 2SK1830 Equivalent

Q1 (Transistor) Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

Rating

-50

-50

-5

-100

Q2 (MOS-FET) Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Gate-source voltage

DC drain current

Symbol

VDS

VGSS

ID

Rating

20

10

50

Q1, Q2 Common Ratings (Ta = 25°C)

Characteristics

Collector power dissipation

Junction temperature

Storage temperature range

Note: Total rating

Symbol

PC

(Note)

Tj

Tstg

Rating

200

150

-55~150

Unit

V

V

V

mA

JEDEC

―

JEITA

―

Unit

TOSHIBA

―

V

Weight: g (typ.)

V

mA

Marking

Unit

FT

mW

°C

°C

Equivalent Circuit (top view)

654

Q1

Q2

123

1

2003-03-12

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