HN1D01FU 데이터 시트보기 (PDF) - Toshiba
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HN1D01FU Datasheet PDF : 4 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FU
Ultra High Speed Switching Application
z Small package
z Low forward voltage:
VF (3) = 0.92 V (typ.)
z Fast reverse recovery time: trr = 1.6 ns (typ.)
z Small total capacitance: CT = 2.2 pF (typ.)
HN1D01FU
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
VRM
VR
IFM
IO
IFSM
85
V
80
V
300*
mA
100*
mA
2*
A
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to 125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
1-2T1A
temperature, etc.) may cause this product to decrease in the
Weight: 6.8 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1, Q2, Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode
is 75% of the single diode one.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 10 mA
― IF = 100 mA
― VR = 30 V
― VR = 80 V
― VR = 0, f = 1 MHz
― IF = 10 mA (fig.1)
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
―
0.1
μA
―
―
0.5
―
2.2 4.0 pF
―
1.6
4.0
ns
Start of commercial production
1992-05
1
2014-03-01
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