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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

HEF4069UBP,652 데이터 시트보기 (PDF) - NXP Semiconductors.

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HEF4069UBP,652
NXP
NXP Semiconductors. NXP
HEF4069UBP,652 Datasheet PDF : 17 Pages
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NXP Semiconductors
HEF4069UB
Hex inverter
12. Application information
Some examples of applications for the HEF4069UB.
Figure 7 shows an astable relaxation oscillator using two HEF4069UB inverters and 2
BAW62 diodes. The oscillation frequency is mainly determined by R1 C1, provided
R1 << R2 and R2 C2 << R1 C1.
The function of R2 is to minimize the influence of the forward voltage across the protection
diodes on the frequency; C2 is a stray (parasitic) capacitance.
The period Tp is given by Tp = T1 + T2,
where:
T1
=
R 1 C 1 I n -V---D----D-----+-----V----S--T-
VST
T2
=
R1C1In
2----V----D---D-----–-----V----S--T-
VDD VST
VST = the signal threshold level of the inverter.
The period is fairly independent of VDD, VST and temperature. The duty factor, however, is
influenced by VST.
VDD
A
1/6 HEF4069UB 1/6 HEF4069UB
D
A
B
VSS
C2 R2
R1
C
C1
B
C
Fig 7. Astable relaxation oscillator
D
forward voltage
clamping diode
VDD
0V
VDD
0V
1.5VDD
VDD
0.5VDD
0V
0.5VDD
VDD
0.5VDD
0V
001aag162
HEF4069UB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 16 November 2011
© NXP B.V. 2011. All rights reserved.
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