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HB52RF648DC-75BL 데이터 시트보기 (PDF) - Elpida Memory, Inc

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HB52RF648DC-75BL Datasheet PDF : 20 Pages
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HB52RF648DC-B, HB52RD648DC-B
512 MB Unbuffered SDRAM S.O.DIMM
64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module
(16 pcs of 32 M × 8 components)
PC133/100 SDRAM
E0083H40 (Ver. 4.0)
Nov. 16, 2001 (K) Japan
Description
The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline
Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 256-Mbit SDRAM (HM5225805BTB)
sealed in TCP package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the
products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high
density mounting possible without surface mount technology. They provide common data inputs and outputs.
Decoupling capacitors are mounted beside TCP on the module board.
Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would
be electrical defects.
Features
Fully compatible with: JEDEC standard outline 8-byte S.O.DIMM
144-pin Zig Zag Dual tabs socket type (dual lead out)
Outline: 67.60 mm (Length) × 31.75 mm (Height) × 3.80 mm (Thickness)
Lead pitch: 0.80 mm
3.3 V power supply
Clock frequency: 133/100 MHz (max)
LVTTL interface
Data bus width: × 64 Non parity
Single pulsed RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length : 1/2/4/8
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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