HB52RD648DC-B 데이터 시트보기 (PDF) - Elpida Memory, Inc

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HB52RD648DC-B

512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components) PC133/100 SDRAM

Elpida Memory, Inc 

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Note: 1. Respect to VSS.

HB52RF648DC-B, HB52RD648DC-B

Symbol

VT

VCC

Iout

PT

Topr

Tstg

Value

Unit

–0.5 to VCC + 0.5

V

(≤ 4.6 (max))

–0.5 to +4.6

V

50

mA

8.0

W

0 to +65

°C

–55 to +125

°C

Note

1

1

DC Operating Conditions (Ta = 0 to +65°C)

Parameter

Symbol

Min

Max

Supply voltage

Input high voltage

Input low voltage

Ambient illuminance

VCC

3.0

3.6

VSS

0

0

VIH

2.0

VCC + 0.3

VIL

–0.3

0.8

—

—

100

Notes: 1. All voltage referred to VSS

2. The supply voltage with all VCC pins must be on the same level.

3. The supply voltage with all VSS pins must be on the same level.

4. VIH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC.

5. VIL (min) = VSS – 2.0 V for pulse width ≤ 3 ns at VSS.

Unit

V

V

V

V

lx

Notes

1, 2

3

1, 4

1, 5

Data Sheet E0083H40

11

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