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RFP15N08L Datasheet PDF : 5 Pages
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Data Sheet
RFP15N08L
June 1999 File Number 2840.1
15A, 80V, 0.140 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP15N08L is an N-Channel enhancement mode
silicon gate power field effect transistor specifically designed
for use with logic level (5 volt) driving sources in applications
such as programmable controllers, automotive switching,
and solenoid drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conduction at gate biases in the 3-5 volt range, thereby
facilitating true on-off power control from logic circuit supply
voltages.
Formerly developmental type TA09804.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP15N08L
TO-220AB
RFP15N08L
NOTE: When ordering, use the entire part number.
Features
• 15A, 80V
• rDS(ON) = 0.140Ω
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly from Q-MOS, N-MOS,
TTL Circuits
• SOA is Power Dissipation Limited
• 175oC Rated Junction Temperature
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
JEDEC TO-220AB
G
S
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-234
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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