HGT4E30N60B3DS(2001) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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HGT4E30N60B3DS
(Rev.:2001)
(Rev.:2001)
Fairchild Semiconductor
HGT4E30N60B3DS Datasheet PDF : 8 Pages
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HGTG30N60B3D, HGT4E30N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
55
RG = 3Ω, L = 1mH, VCE = 480V
50
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
30
25
10
TJ = 25oC, TJ = 150oC, VGE = 15V
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
250
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
200
TJ = 25oC, TJ = 150oC, VGE = 15V
150
100
50
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 3Ω, L = 1mH,
VCE = 480V
250
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
200
120
RG = 3Ω, L = 1mH, VCE = 480V
100
TJ = 150oC, VGE = 10V AND 15V
80
150
100
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
60
TJ = 25oC, VGE = 10V AND 15V
40
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
300
DUTY CYCLE <0.5%, VCE = 10V
250 PULSE DURATION = 250µs
TC = -55oC
200
150
TC = 25oC
100
TC = 150oC
50
0
4
5
6
7
8
9
10
11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16 Ig (REF) = 1mA, RL = 10Ω, TC = 25oC
14
12
VCE = 600V
10
8
6
VCE = 200V
4
VCE = 400V
2
0
0
50
100
150
200
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
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