FM200TU-2A 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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FM200TU-2A

HIGH POWER SWITCHING USE INSULATED PACKAGE

MITSUBISHI ELECTRIC  

MITSUBISHI <MOSFET MODULE>

FM200TU-2A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)

Symbol

VDSS

VGSS

ID(rms)

IDM

IDA

IS(rms)*1

ISM*1

PD*4

PD*4

Tch

Tstg

Viso

Item

Drain-source voltage

Gate-source voltage

Drain current

Avalanche current

Source current

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

G-S Short

D-S Short

TC’ = 137°C*3

Pulse*2

L = 10µH Pulse*2

Conditions

Pulse*2

TC = 25°C

TC’ = 25°C*3

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M6 screw

Mounting M6 screw

Typical value

Ratings

100

±20

100

200

100

100

200

410

560

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5

600

Unit

V

V

Arms

A

A

Arms

A

W

W

°C

°C

Vrms

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)

Symbol

Item

Conditions

Limits

Min.

Typ.

Max. Unit

IDSS

Drain cutoff current

VDS = VDSS, VGS = 0V

—

—

1

mA

VGS(th) Gate-source threshold voltage ID = 10mA, VDS = 10V

4.7

6

7.3

V

IGSS

Gate leakage current

VGS = VGSS, VDS = 0V

—

—

1.5

µA

rDS(ON)

(chip)

Static drain-source

On-state resistance

ID = 100A

VGS = 15V

Tch = 25°C

—

Tch = 125°C

—

2.4

3.3

mΩ

4.1

—

VDS(ON)

(chip)

Static drain-source

On-state voltage

ID = 100A

VGS = 15V

Tch = 25°C

—

Tch = 125°C

—

0.24

0.33

V

0.41

—

R(lead)

Lead resistance

ID = 100A

terminal-chip

Tch = 25°C

—

Tch = 125°C

—

1.2

1.68

—

mΩ

—

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 10V

VGS = 0V

—

—

50

—

—

7

nF

—

—

4

QG

Total gate charge

VDD = 48V, ID = 100A, VGS = 15V

—

760

—

nC

td(on)

Turn-on delay time

—

—

400

tr

Turn-on rise time

VDD = 48V, ID = 100A, VGS ± 15V

—

td(off)

Turn-off delay time

RG = 13Ω, Inductive load

—

tf

Turn-off fall time

—

trr*1

Reverse recovery time

IS = 100A

—

Qrr*1

Reverse recovery charge

—

VSD*1

Source-drain voltage

IS = 100A, VGS = 0V

—

Rth(ch-c)

MOSFET part (1/6 module)*7

—

Thermal resistance

Rth(ch-c’)

MOSFET part (1/6 module)*3

—

Rth(c-f)

Case to heat sink, Thermal grease Applied*8 (1/6 module) —

Rth(c’-f’)

Contact thermal resistance

Case to heat sink, Thermal grease Applied*3, *8 (1/6 module)

—

—

300

ns

—

450

—

300

—

250

ns

3.6

—

µC

—

1.3

V

—

0.30

—

0.22

0.1

—

K/W

0.09

—

NTC THERMISTOR PART

Symbol

RTh*6

B*6

Parameter

Resistance

B Constant

Conditions

TTh = 25°C*5

Resistance at TTh = 25°C, 50°C*5

Limits

Min.

Typ.

—

100

—

4000

*1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).

*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.

*3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.

*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.

*5: TTh is thermistor temperature.

*6:B = In( R25 )/( 1

1)

R50 T25 T50

R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K]

R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K]

*7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.

*8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Max. Unit

—

kΩ

—

K

Feb. 2009

2

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