DIM100PHM33-F000 데이터 시트보기 (PDF) - Dynex Semiconductor
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DIM100PHM33-F000 Datasheet PDF : 8 Pages
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DIM100PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec Diode reverse recovery energy
Test Conditions
IC = 100A
VGE = ±15V
VCE = 1800V
Cge = 33nF
LS ~ 100nH
RG(ON) = 33
RG(OFF) = 33
RG(ON) = 16.5,
RG(OFF) = 33
IF = 100A
VCE = 1800V
dIF/dt = 800A/μs
Min Typ. Max Units
1.95
μs
170
ns
110
mJ
1180
ns
225
ns
150
mJ
40
μC
75
A
40
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec Diode reverse recovery energy
Test Conditions
IC = 100A
VGE = ±15V
VCE = 1800V
Cge = 33nF
LS ~ 100nH
RG(ON) = 33
RG(OFF) = 33
RG(ON) = 16.5,
RG(OFF) = 33
IF = 100A
VCE = 1800V
dIF/dt = 800A/μs
Min Typ. Max Units
2200
μs
190
ns
135
mJ
1150
ns
280
ns
200
mJ
65
μC
85
A
65
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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