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BZX79-B/C3V0 데이터 시트보기 (PDF) - NXP Semiconductors.

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BZX79-B/C3V0
NXP
NXP Semiconductors. NXP
BZX79-B/C3V0 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
NXP Semiconductors
Voltage regulator diodes
Product data sheet
BZX79 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series: ±2%, and approx. ±5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
handbook, halfpage k
a
MAM239
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
IF
continuous forward current
IZSM
non-repetitive peak reverse current
Ptot
total power dissipation
PZSM
Tstg
Tj
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
MIN. MAX. UNIT
250
mA
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Tables 1 and 2 A
Tamb = 50 °C; note 1
400
mW
Tamb = 50 °C; note 2
500
mW
tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.3
40
W
65
+200 °C
65
+200 °C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
CONDITIONS
IF = 10 mA; see Fig.4
MAX.
0.9
UNIT
V
2002 Feb 27
2

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