BT258S-800LT 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT258S-800LT

SCR logic level, high temperature

NXP Semiconductors. 

NXP Semiconductors

BT258S-800LT

SCR logic level, high temperature

6. Characteristics

Table 5. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

IGT

gate trigger current

IL

latching current

IH

holding current

VT

on-state voltage

VGT

gate trigger voltage

ID

off-state current

IR

reverse current

Dynamic characteristics

VD = 12 V; IT = 0.1 A; see Figure 8

VD = 12 V; IG = 0.1 A; see Figure 10

VD = 12 V; IG = 0.1 A; see Figure 11

IT = 16 A; see Figure 9

IT = 0.1 A; see Figure 7

VD = 12 V

VD = VDRM; Tj = 110 °C

VD = VDRM(max); Tj = 150 °C

VR = VRRM(max); Tj = 150 °C

20

-

50

µA

-

0.4

10

mA

-

0.3

6

mA

-

1.3

1.6

V

-

0.4

1.5

V

0.1

0.2

-

V

-

0.5

2.5

mA

-

0.5

2.5

mA

dVD/dt rate of rise of

VDM = 0.67 × VDRM(max); Tj = 150 °C; exponential

35

70

-

off-state voltage

waveform; RGK = 100 Ω

tgt

gate-controlled

ITM = 10 A; VD = VDRM(max); IG = 5 mA;

turn-on time

dIG/dt = 0.2 A/µs

-

2

-

V/µs

µs

1.6

VGT

VGT(25°C)

1.2

0.8

0.4

003aac296

3

IGT

IGT(25°C)

2

1

003aac297

0

−50

0

50

100

150

Tj (°C)

Fig 7. Normalized gate trigger voltage as a function

of junction temperature

0

−50

0

50

100

150

Tj (°C)

Fig 8. Normalized gate trigger current as a function

of junction temperature

BT258S-800LT_1

Product data sheet

Rev. 01 — 2 September 2008

© NXP B.V. 2008. All rights reserved.

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