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BT169D-L

Thyristor logic level

NXP Semiconductors. 

NXP Semiconductors

BT169D-L

Thyristor logic level

3. Ordering information

Table 2. Ordering information

Type number

Package

Name

Description

BT169D-L

TO-92

plastic single-ended leaded (through hole) package; 3 leads

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDRM

VRRM

IT(AV)

repetitive peak off-state voltage

repetitive peak reverse voltage

average on-state current

half sine wave; Tlead ≤ 83 °C;

see Figure 1

IT(RMS)

RMS on-state current

all conduction angles; see Figure 4

and 5

ITSM

non-repetitive peak on-state

half sine wave; Tj = 25 °C prior to

current

surge; see Figure 2 and 3

t = 10 ms

t = 8.3 ms

I2t

dIT/dt

IGM

VRGM

PGM

PG(AV)

Tstg

Tj

I2t for fusing

rate of rise of on-state current

peak gate current

peak reverse gate voltage

peak gate power

average gate power

storage temperature

junction temperature

tp = 10 ms

ITM = 2 A; IG = 10 mA;

dIG/dt = 100 mA/µs

over any 20 ms period

Min

Max

-

400

-

400

-

0.5

-

0.8

-

8

-

9

-

0.32

-

50

-

1

-

5

-

2

-

0.1

−40

+150

-

125

Version

SOT54

Unit

V

V

A

A

A

A

A2s

A/µs

A

V

W

W

°C

°C

BT169D-L_2

Product data sheet

Rev. 02 — 26 February 2008

© NXP B.V. 2008. All rights reserved.

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