NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
1.6
VGT
VGT(25°C)
1.2
003aab823
3
IGT
IGT(25°C)
2
003aab824
0.8
1
0.4
−50
0
50
100
150
Tj (°C)
0
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of Fig 8. Normalized gate trigger current as a function of
junction temperature
junction temperature
30
IT
(A)
20
001aaa959
3
IL
IL(25°C)
2
003aab825
(1)
(2) (3)
10
1
0
0
0.5
1
1.5
2
VT (V)
Vo = 1.06 V
Rs = 0.0304 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
0
−50
0
50
100
150
Tj (°C)
Fig 10. Normalized latching current as a function of
junction temperature
BT151-1000RT_1
Product data sheet
Rev. 01 — 6 August 2007
© NXP B.V. 2007. All rights reserved.
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