BS62LV8000EI-10 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS62LV8000EI-10 Datasheet PDF : 10 Pages
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BSI
BS62LV8000
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
TEST CONDITIONS
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
MIN. TYP. (1) MAX.
-0.5
--
0.8
-0.5
--
0.8
2.0
--
Vcc+0.2
2.2
--
Vcc+0.2
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
--
--
1
IOL
Output Leakage Current
Vcc = Max, CE1 = VIH or CE2 = VIL or
OE = VIH, VI/O = 0V to Vcc
--
--
1
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3V
--
--
0.4
Vcc=5V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3V
2.4
--
--
Vcc=5V
ICC
Operating Power Supply CE1= VIL, CE2= VIH, IDQ = 0mA,
Vcc=3V
--
--
20
Current
F = Fmax(3)
Vcc=5V
--
--
45
ICCSB
Standby Current-TTL
CE1 = VIH, CE2= V IIL, DQ = 0mA
Vcc=3V
--
--
1
Vcc=5V
--
--
2
CE1ЊVcc-0.2V, CE2Љ0.2V
Vcc=3V
--
0.5
3
ICCSB1
Standby Current-CMOS VIN Њ Vcc - 0.2V or VIN Љ 0.2V Vcc=5V
--
3
30
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
UNITS
V
V
uA
uA
V
V
mA
mA
uA
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE1ЊVcc - 0.2V or CE2 Љʳ 0.2V or
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE1 Њ Vcc - 0.2V or CE2 Љʳ 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.4
2
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE1 ≥ Vcc - 0.2V
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
Vcc
t CDR
Data Retention Mode
VDR Њ 1.5V
CE2
CE2 Љ 0.2V
VIL
Vcc
tR
VIH
Vcc
tR
VIL
R0201-BS62LV8000
3
Revision 2.4
April 2002
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