BS616UV1010DC 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS616UV1010DC Datasheet PDF : 11 Pages
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n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
BS616UV1010
JEDEC
PARAMETER
NAME
tAVAX
tAVQX
tELQV
tBLQV
tGLQV
tELQX
tBLQX
tGLQX
tEHQZ
tBHQZ
tGHQZ
tAVQX
PARANETER
NAME
DESCRIPTION
tRC
tAA
tACS
tBA
tOE
tCLZ
tBE
tOLZ
tCHZ
tBDO
tOHZ
tOH
Read Cycle Time
Address Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Data Byte Control to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
CYCLE TIME : 100ns
MIN.
TYP.
MAX.
100
--
--
--
--
100
(CE) --
--
100
(LB, UB) --
--
100
--
--
50
(CE) 15
--
--
(LB, UB) 15
--
--
15
--
--
(CE) --
--
40
(LB, UB) --
--
40
--
--
35
15
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
R0201-BS616UV1010
5
Revision 2.6
May.
2006
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