BC858CDW1T1 데이터 시트보기 (PDF) - Leshan Radio Company,Ltd
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BC858CDW1T1 Datasheet PDF : 5 Pages
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LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6
5
4
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
Q2
Q1
1
2
3
See Table
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
V CEO
V CBO
V EBO
IC
BC856
–65
–80
–5.0
–100
BC857 BC858
–45
–30
–50
–30
–5.0
–5.0
–100 –100
Unit
V
V
V
mAdc
6
5
4
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Symbol
PD
R θJA
T J , T stg
Max
Unit
380
mW
250
mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC856b–1/5
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