NXP Semiconductors
BB179BLX
UHF variable capacitance diode
30
Cd
(pF)
20
10
001aaj480
0.8
rs
(Ω)
0.6
0.4
0.2
001aaj481
0
10−1
1
10
102
VR (V)
Fig 1.
f = 1 MHz; Tj = 25 C.
Diode capacitance as a function of reverse
voltage; typical values
103
IR
(nA)
102
001aaj482
0
10−1
1
10
102
VR (V)
Fig 2.
f = 470 MHz; Tj = 25 C.
Diode serial resistance as a function of reverse
voltage; typical values
10−2
TCCd
(K−1)
10−3
001aaj483
10
10−4
1
0
20
40
60
80
100
Tj (°C)
Fig 3. Reverse current as a function of junction
temperature; maximum values
10−5
10−1
1
10
102
VR (V)
Fig 4.
Tj = 0 C to 85 C.
Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values
BB179BLX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 5 September 2011
© NXP B.V. 2011. All rights reserved.
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