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BB179BLX Datasheet PDF : 8 Pages
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NXP Semiconductors
BB179BLX
UHF variable capacitance diode
4. Marking
Table 3. Marking codes
Type number
BB179BLX
Marking code
L5
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
reverse voltage
-
IF
forward current
-
Tstg
storage temperature
55
Tj
junction temperature
55
6. Characteristics
Max
Unit
32
V
20
mA
+150
C
+125
C
Table 5. Characteristics
Symbol
Parameter
Conditions
IR
reverse current
rs
diode series resistance
see Figure 3
VR = 30 V
VR = 30 V; Tj = 85 C
f = 470 MHz at Cd = 9 pF;
see Figure 2
Cd
diode capacitance
f = 1 MHz; see Figure 1 and
Figure 4
Cd(1V)/Cd(2V) diode capacitance ratio (1 V to 2 V)
VR = 1 V
VR = 28 V
f = 1 MHz
Cd(1V)/Cd(28V) diode capacitance ratio (1 V to 28 V) f = 1 MHz
Cd(25V)/Cd(28V) diode capacitance ratio (25 V to 28 V) f = 1 MHz
Cd/Cd
diode capacitance matching
VR = 1 V to 28 V; in sequence of
5 diodes (gliding)
Min Typ
-
-
-
-
-
0.65
18.22 -
1.9 2.1
-
1.27
8.45 9
-
1.05
-
-
Max
10
200
-
20
2.25
-
10.9
-
2
Unit
nA
nA
pF
pF
%
BB179BLX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 5 September 2011
© NXP B.V. 2011. All rights reserved.
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