74LVC3G04GT(2007) 데이터 시트보기 (PDF) - NXP Semiconductors.

부품명

상세내역

일치하는 목록

74LVC3G04GT
(Rev.:2007)

Triple inverter

NXP Semiconductors. 

NXP Semiconductors

74LVC3G04

Triple inverter

Table 7. Static characteristics …continued

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

VOH

VOL

II

IOFF

ICC

∆ICC

HIGH-level output voltage

LOW-level output voltage

input leakage current

power-off leakage current

supply current

additional supply current

VI = VIH or VIL

IO = −100 µA; VCC = 1.65 V to 5.5 V

IO = −4 mA; VCC = 1.65 V

IO = −8 mA; VCC = 2.3 V

IO = −12 mA; VCC = 2.7 V

IO = −24 mA; VCC = 3.0 V

IO = −32 mA; VCC = 4.5 V

VI = VIH or VIL

IO = 100 µA; VCC = 1.65 V to 5.5 V

IO = 4 mA; VCC = 1.65 V

IO = 8 mA; VCC = 2.3 V

IO = 12 mA; VCC = 2.7 V

IO = 24 mA; VCC = 3.0 V

IO = 32 mA; VCC = 4.5 V

VI = 5.5 V or GND; VCC = 0 V to 5.5 V

VCC = 0 V; VI or VO = 5.5 V

VI = 5.5 V or GND;

VCC = 1.65 V to 5.5 V; IO = 0 A

per pin; VCC = 2.3 V to 5.5 V;

VI = VCC − 0.6 V; IO = 0 A

VCC − 0.1

0.95

1.7

1.9

2.0

3.4

-

-

-

-

-

-

-

-

-

-

[1] All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.

Typ[1] Max

-

-

-

-

-

-

-

-

-

-

-

-

-

0.10

-

0.70

-

0.45

-

0.60

-

0.80

-

0.80

-

±20

-

±20

-

40

-

5000

Unit

V

V

V

V

V

V

V

V

V

V

V

V

µA

µA

µA

µA

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.

Symbol Parameter

Conditions

−40 °C to +85 °C

Min Typ[1] Max

tpd

propagation delay nA to nY; see Figure 7

[2]

VCC = 1.65 V to 1.95 V

1.0

3.5

8.0

VCC = 2.3 V to 2.7 V

0.5

2.2

4.4

VCC = 2.7 V

VCC = 3.0 V to 3.6 V

0.5

2.7

5.2

0.5

2.7

4.1

VCC = 4.5 V to 5.5 V

0.5

1.9

3.2

CPD

power dissipation VI = GND to VCC; VCC = 3.3 V [3]

-

13.5

-

capacitance

−40 °C to +125 °C Unit

Min

Max

1.0

9.5

ns

0.5

5.4

ns

0.5

7.0

ns

0.5

5.5

ns

0.5

3.8

ns

-

-

pF

[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

74LVC3G04_5

Product data sheet

Rev. 05 — 5 October 2007

© NXP B.V. 2007. All rights reserved.

6 of 15

Share Link: