ACTS573T 데이터 시트보기 (PDF) - Intersil

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ACTS573T

Radiation Hardened Octal Three-State Transparent Latch

Intersil 

Die Characteristics

DIE DIMENSIONS:

(2600µm x 2600µm x 533µm ±51µm)

102 x 102 x 21mils ±2mil

METALLIZATION:

Type: Al Si Cu

Thickness: 10kÅ ±2kÅ

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

Bond Pad #20 First

BACKSIDE FINISH:

Sapphire

Metallization Mask Layout

ACTS573T

PASSIVATION:

Type: Silox (SiO2)

Thickness: 8kÅ ±1kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm2

TRANSISTOR COUNT:

190

PROCESS:

CMOS SOS

ACTS573T

D2 (4)

D3 (5)

NC

NC

D4 (6)

D5 (7)

(17) Q2

(16) Q3

NC

NC

(15) Q4

(14) Q5

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