2SK3212 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK3212

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3212

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 0.1 Ω typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

TO–220FM

ADE-208-752 (Z)

1st. Edition

February 1999

D

G

S

123

1. Gate

2. Drain

3. Source

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