Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 12 A
VGS = 10 V, ID = 12 A
VDS = 10 V, ID = 12 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 48 V, VGS = 10 V, ID = 25 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 25 A, VGS = 0 V
IDR = 25 A, VGS = 0 V
dIDR / dt = 50 A / μs
Marking
2SK2311
Min Typ. Max Unit
—
—
±10
μA
—
— 100 μA
60
—
—
V
0.8
—
2.0
V
—
57
80
mΩ
—
36
46
10
16
—
S
— 1000 —
— 200 —
pF
— 550 —
—
20
—
—
30
—
ns
—
55
—
— 130 —
—
38
—
—
25
—
nC
—
13
—
Min Typ. Max Unit
—
—
25
A
—
—
100
A
—
—
−1.8
V
—
50
—
ns
—
35
—
μC
K2311
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17