2SC5200 데이터 시트보기 (PDF) - Unspecified

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2SC5200

150 Watt Silicon NPN Power Transistors

Unspecified 

2SC5200

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A

VBE

Base-emitter voltage

IC=7A ; VCE=5V

ICBO

Collector cut-off current

VCB=230V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=7A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=5V

COB

Collector output capacitance

hFE-1 classifications

R

O

55-100

80-160

f=1MHz;VCB=10V

Mechanical Dimensions

−B−

N

R

123

TO-3PL

Q

0.25 (0.010) M T B M

−T−

C

U

E

A

L

P

K

F 2 PL

W

G

J

D 3 PL

H

0.25 (0.010) M T B S

MIN TYP. MAX UNIT

230

V

3.0

V

1.5

V

5

µA

5

µA

55

160

35

30

MHz

200

pF

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

INCHES

DIM MIN MAX MIN MAX

A 28.0 29.0 1.102 1.142

B 19.3 20.3 0.760 0.800

C

4.7

5.3 0.185 0.209

D 0.93 1.48 0.037 0.058

E

1.9

2.1 0.075 0.083

F

2.2

2.4 0.087 0.102

G

5.45 BSC

0.215 BSC

H

2.6

3.0 0.102 0.118

J 0.43 0.78 0.017 0.031

K 17.6 18.8 0.693 0.740

L

11.2 REF

0.411 REF

N

4.35 REF

0.172 REF

P

2.2

2.6 0.087 0.102

Q

3.1

3.5 0.122 0.137

R

2.25 REF

0.089 REF

U

6.3 REF

0.248 REF

W

2.8

3.2 0.110 0.125

STYLE 2:

PIN 1.

2.

3.

BASE

COLLECTOR

EMITTER

Rev.08T

© 1995 Thinki Semiconductor Co., Ltd.

Page 2/2

http://www.thinkisemi.com.tw/

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