2SC3947 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC3947 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.5A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2.5A ;IB=0.5A
VCE=800V; IE=0
TC=100℃
VEB=6V ;IC=0
hFE
DC current gain
IC=2.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=2.5A ; VCC=250V
IB1=0.5A; IB2=-1A
Product Specification
2SC3947
MIN TYP. MAX UNIT
500
V
850
V
7
V
1.0
V
1.5
V
0.1
1.0
mA
0.1 mA
10
30
20
MHz
70
pF
0.5 μs
3.0 μs
0.3 μs
2
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