2SC3356WS 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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2SC3356WS Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise and high gain: NF=1.1dB TYP,
Pb
Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Lead-free
z High power gain:MAG=13dB TYP.
@VCE=10V.IC=20mA,f=1.0GHz
2SC3356W
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
2SC3356W
R23/R24/R25
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
20
VCEO
Collector-Emitter Voltage
12
VEBO
Emitter-Base Voltage
3
IC
Collector Current -Continuous
100
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF001
Rev.A
www.galaxycn.com
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