SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2706
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=140V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
MIN TYP. MAX UNIT
140
V
5
V
2.0
V
10
µA
10
µA
55
160
35
90
MHz
2