2N2060JV 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N2060JV Datasheet PDF : 3 Pages
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2N2060
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 30 mA
60
Volts
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 Ω
80
Volts
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
ICBO1
ICBO2
ICBO3
ICEO
VCB = 100 Volts
VCB = 80 Volts
VCB = 80 Volts, TA = 150°C
VCE = xx Volts
10
µA
2
nA
10
µA
µA
Collector-Emitter Cutoff Current
ICEX VCE = xx Volts, VEB = x Volts
µA
Collector-Emitter Cutoff Current
ICES VCE = xx Volts
nA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts
10
µA
2
nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage Differential
Base-Emitter Voltage Differential
change with temperature
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
|VBE1 - VBE2|1
|VBE1 - VBE2|2
|VBE1 - VBE2|1
|VBE1 - VBE2|2
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Test Conditions
IC = 10 µA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
TA = -55°C
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 1 mA
VCE = 5 Volts, IC = 100 µA
TA = 25°C and -55°C
VCE = 5 Volts, IC = 1 mA
TA = 25°C and +125°C
Min
Typ
Max Units
25
75
30
90
40
120
50
150
10
5
mVolts
.8
mVolts
1
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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