2N2060J 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N2060J Datasheet PDF : 3 Pages
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Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2060J)
• JANTX level (2N2060JX)
• JANTXV level (2N2060JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
2N2060
Silicon NPN Transistor
Data Sheet
Applications
• Matched, Dual Transistors
• Low power
• NPN silicon transistor
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
TJ
TSTG
Features
• Hermetically sealed TO-77 metal can
• Also available in chip configuration
• Chip geometry 0410
• Reference document:
MIL-PRF-19500/270
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
60
100
7
500
540 one section
600 both sections
3.08 one section
3.48 both sections
1.5 one section
2.12 both sections
8.6 one section
12.1 both sections
Volts
Volts
Volts
mA
mW
mW
mW/°C
mW/°C
W
W
mW/°C
mW/°C
-65 to +200
°C
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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