1N4148,113 데이터 시트보기 (PDF) - NXP Semiconductors.
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1N4148,113 Datasheet PDF : 9 Pages
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NXP Semiconductors
High-speed diodes
Product data sheet
1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
MIN.
−
−
−
−
MAX.
100
100
200
450
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
500
mW
−65
+200 °C
−
200
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
1N4148
1N4448
IR
reverse current
IR
reverse current; 1N4448
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MIN.
see Fig.3
IF = 10 mA
IF = 5 mA
IF = 100 mA
VR = 20 V; see Fig.5
VR = 20 V; Tj = 150 °C; see Fig.5
VR = 20 V; Tj = 100 °C; see Fig.5
f = 1 MHz; VR = 0 V; see Fig.6
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
−
0.62
−
−
−
−
−
−
MAX. UNIT
1
V
0.72
V
1
V
25
nA
50
µA
3
µA
4
pF
4
ns
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-tp)
Rth(j-a)
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed-circuit board without metallization pad.
VALUE UNIT
240
K/W
350
K/W
2004 Aug 10
3
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