ADS6608A4A-75 데이터 시트보기 (PDF) - A-Data Technology

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ADS6608A4A-75

133 Mhz LVTTL synchronous DRAM, 2M x 8 bit x 4 banks / 400mil 54pin TSOPII

A-Data Technology 

A-Data

ADS6608A4A

DC Characteristics II

Parameter

Symbol

Test condition

Speed

-7.5

Unit

Note

Burst length=1, One bank active

Operating Current IDD1

75

tRC≧tRC(min),IOL=0mA

mA

1

Precharge standby

current in power

down mode

IDD2P CKE≦VIL(max), tCK=min

IDD2PS CKE≦VIL(max), tCK=∞

1

mA

1

CKE≧VIH(min), /CS≧VIH(min),

tCK=min input signals are

Precharge standby IDD2N changed one time during 2clks.

15

current in Non power

All other pins ≧VDD-0.2V or ≦

mA

down mode

0.2V

CKE≧VIH(min), tCK=∞

IDD2NS

6

Input signals are stable.

Active standby

current in power

down mode

IDD3P CKE≦VIL(max), tCK=min

IDD3PS CKE≦VIL(max), tCK=∞

3

mA

3

CKE≧VIH(min), /CS≧VIH(min),

tCK=min input signals are

Active standby

IDD3N changed one time during 2clks.

30

current in Non power

All other pins ≧VDD-0.2V or ≦

mA

down mode

0.2V

CKE≧VIH(min), tCK=∞

IDD3NS

25

Input signals are stable.

Burst mode

operating current

IDD4

tCK≧tCK(min),IOL=0 mA

All banks active

115

mA

1

tRRC≧tRRC(min), All banks

Auto refresh current IDD5

135

mA

2

active

Self refresh current IDD6 CKE≦0.2V

1

mA

Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output

open.

2. Min. of tRRC is shown at AC characteristics.

Rev 1 April, 2001

5

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