STPS30150C(2010) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS30150C Datasheet PDF : 11 Pages
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Characteristics
STPS30150C
Figure 5.
Non repetitive surge peak forward Figure 6.
current vs. overload duration (max.
values, per diode)
Non repetitive surge peak forward
current vs. overload duration (max.
values, per diode) (TO-220FPAB)
IM(A)
225
200
175
150
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
TO-220AB, TO-247, D2PAK
t(s)
1.E-02
1.E-01
Tc=50°C
Tc=75°C
Tc=125°C
1.E+00
IM(A)
140
130
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
t
δ=0.5
1.E-03
t(s)
1.E-02
TO-220FPAB
1.E-01
Tc=50°C
Tc=75°C
Tc=125°C
1.E+00
Figure 7.
Variation of thermal impedance
junction to case versus pulse
duration (per diode)
Zth(j-c)/Rth(j-c)
1.0
TO-220AB, TO-247, D2PAK
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
tp(s)
1.E-02
T
δ=tp/T
1.E-01
tp
1.E+00
Figure 8.
Variation of thermal impedance
junction to case versus pulse
duration (per diode) (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
TO-220FPAB
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
T
0.1
Single pulse
0.0
1.E-03
1.E-02
tp(s)
1.E-01
δ=tp/T
1.E+00
tp
1.E+01
Figure 9.
IR(µA)
1E+5
1E+4
1E+3
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Tj=175°C
Tj=150°C
Tj=125°C
1E+2
1E+1
Tj=100°C
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
1E+0
Tj=25°C
VR(V)
1E-1
10
0
25
50
75
100
125
150
1
2
VR(V)
5
10
20
50
100
200
4/11
Doc ID 7757 Rev 8
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