BSS138PW,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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BSS138PW,115 Datasheet PDF : 16 Pages
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Nexperia
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
Simplified outline Graphic symbol
3
D
1
2
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BSS138PW SC-70
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
BSS138PW
[1] * = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
XJ*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage
Tamb = 25 °C
-
VGS
gate-source voltage
Tamb = 25 °C
-
ID
drain current
VGS = 10 V
[1]
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM
peak drain current
Tamb = 25 °C;
-
single pulse; tp ≤ 10 μs
Version
SOT323
Max Unit
60
V
±20
V
320
mA
200
mA
1.2
A
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© Nexperia B.V. 2017. All rights reserved
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