5STP34N5000 데이터 시트보기 (PDF) - ABB
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5STP34N5000 Datasheet PDF : 6 Pages
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Triggering
Maximum rated values 1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Gate power loss
Average gate power loss
Characteristic values
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Symbol Conditions
VFGM
IFGM
VRGM
PG
For DC gate current
PGAV
Symbol Conditions
VGT
Tj = 25°C
IGT
Tj = 25°C
VGD
VD = 0.4 x VDRM, Tvjmax = 125°C
IGD
VD = 0.4 x VDRM, Tvjmax = 125°C
5STP 34N5200
min typ
max Unit
12
V
10
A
10
V
3
W
see Fig. 9
min typ
0.3
10
max
2.6
400
Unit
V
mA
V
mA
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
Operating junction
Tj
temperature range
Storage temperature range Tstg
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction Rth(j-c)
to case
Double side cooled
Thermal resistance case to
heatsink
Rth(j-c)A
Rth(j-c)C
Rth(c-h)
Anode side cooled
Cathode side cooled
Double side cooled
Rth(c-h) Single side cooled
Analytical function for transient thermal
impedance:
min typ max Unit
125
°C
-40
140
°C
min typ max Unit
5.7 K/kW
11.4 K/kW
11.4 K/kW
1
K/kW
2
K/kW
n
å ZthJC(t) = Ri(1- e-t/τ i )
i =1
i
1
2
3
4
Ri(K/kW)
3.4
1.26
0.68
0.35
τi(s)
0.8685
0.1572 0.0219 0.0078
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 3 of 6
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