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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

MEN09N03BJ3 데이터 시트보기 (PDF) - Unspecified

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MEN09N03BJ3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 4/7
Characteristic Curves(Cont.)
GATE CHARGE CHARACTERISTICS
G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID = 2 5 A
CAPACITANCE CHARACTERISTICS
CA PA CITA N CE CH A RA CTERISTICS
10 4
10
V DS =5V
8
10V
10 3
15V
6
4
10 2
Ciss
Co ss
Cr ss
2
0
0
10
20
30
Q g ,G A T E C H A R G E (n C )
MAXMIMAUXMISMAFUEMOPSEARAFTEINOGPAERREAATING AREA
300
200
10μs
100
Rds(on) Limit
100μs
50
1ms
20
10ms
10
D10C0ms
5
2 VGS=10V
1
SINVGGS=L1E0VPULSE
TRCθRSJT=CIcθN2J=C=G5=22L25E5.5°PC°UC//LWWSE
0.5
0.5 1
23
5
10
20 30 50
VDVDSS,,DDRARINA- SIONU-RCSEOVOULTRACGEE VOLTAGE(V)
TraTnRsAieNnStITEhNeTrmTHaEl RReMsApoLnRsEeSCISuTrvAeNCE
1
Duty Cycle=0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10-2
10-1
MEN09N03BJ3
Notes:
DM
1.Duty Cycle,D=
t1
t2
2.RθJC =2.5°C/W
3.TJ - TC =P* RθJC (t)
4.RθJC(t)=r(t) * RθJC
1
10
100
t1, Timte1(,sTeimc)e(sec)
f = 1 M Hz
V GS= 0 V
0
5
10
15
20
25
30
V DS - D RA IN - t o - SO U RCE V LT A G E ( V )
SSIINNGGLELPEUPLSUELMSAEXIMMUAMXPIMOWUEMRDPISOSWIPAETRIONDISSIPATION
3000
2500
SINGLE PULSE
RθJC= 2.5°C/ W
TC =25°C
2000
1500
1000
500
0
0.01
0.1
1
10
100
1000
SSINIGNLEGPLULESEPTIUMLE(SSEEC)TIME(SEC)
1000
CYStek Product Specification

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