TPC8107(2003) 데이터 시트보기 (PDF) - Toshiba
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TPC8107 Datasheet PDF : 7 Pages
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TPC8107
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
IDSS
VDS = -30 V, VGS = 0 V
¾
¾
-10
mA
V (BR) DSS
V (BR) DSX
ID = -10 mA, VGS = 0 V
ID = -10 mA, VGS = 20 V
-30
¾
¾
V
-15
¾
¾
Vth
VDS = -10 V, ID = -1 mA
-0.8
¾
-2.0
V
RDS (ON)
VGS = -4 V, ID = -6.5 A
VGS = -10 V, ID = -6.5 A
¾
10
15
mW
¾
5.5
7.0
|Yfs|
VDS = -10 V, ID = -6.5 A
15.5 31
¾
S
Ciss
¾ 5880 ¾
Crss
VDS = -10 V, VGS = 0 V, f = 1 MHz ¾ 1000 ¾
pF
Coss
¾ 1050 ¾
tr
ton
VG-S100
V
V
tf
¾
11
¾
ID = -6.5 A
VOUT
¾
22
¾
ns
¾
110
¾
VDD ~- -15 V
toff
Duty <= 1%, tw = 10 ms
¾
395
¾
Qg
Qgs1
Qgd
VDD ~- -24 V, VGS = -10 V,
ID = -13 A
¾
130
¾
¾
10
¾
nC
¾
30
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
IDRP
VDSF
Test Condition
¾
IDR = -13 A, VGS = 0 V
Min Typ. Max Unit
¾
¾
-52
A
¾
¾
1.2
V
3
2003-02-20
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