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2CL3509H

High Voltage T3512H Diode Rectifier For Microwave Ovens

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Power Semiconductor Technology

2CL3509H 2CL3512H

High Voltage Diodes for Micro-Wave Oven

Characteristics(Typical)

400

Ta =25

300

200

2CL3512H

2CL3509H

1.0

Ta =25

0.1

0.01

2CL3509H

2CL3512H

100

0 20 40 60 80 100 120 140

0

0

3

6 9 12 1V5FM V18

IF AV Ta Derating

Forward Characteristics

Safety Test

400

300

200

100

0

0.001

03

V(BR) kV

6 9 12 15

Breakdown Voltage Distribution

Reverse Characteristics

100

Ta =25

80 IR=100 A

N=100pcs.

60

40

2CL3509H

2CL3512H

20

0

12 14 16 18 20 22 24 26

3mm Wide metal film is rolled on the surface

middle of diode body

1.Insulation Resistance Test:500V DC voltage is

added between A and B. The measurement by

insulation resistance meter is big than 1000M .

2.Resistance To Voltage Strength Test: 15kV half-

sine wave voltage is added between A and B for

one minute and no breakdown or arc in insulation

oil.

SiPower - The official marketing arm of Zhonghuan Semiconductor

http://www.sipower-inc.com

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