K3563(2003) 데이터 시트보기 (PDF) - Toshiba
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K3563 Datasheet PDF : 3 Pages
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2SK3563
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
±10
µA
V (BR) GSS ID = ±10 µA, VGS = 0 V
±30
V
IDSS
VDS = 500 V, VGS = 0 V
100
µA
V (BR) DSS ID = 10 mA, VGS = 0 V
500
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 2.5 A
1.35 1.50 Ω
Yfs
VDS = 10 V, ID = 2.5 A
1.5 3.5
S
Ciss
550
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
7
pF
Coss
70
tr
10 V
VGS
ID = 2.5 A VOUT
10
0V
ton
15 Ω
RL =
20
90 Ω
ns
tf
10
VDD ∼− 225 V
toff
Duty <= 1%, tw = 10 µs
50
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
16
10
nC
6
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
5
A
20
A
−1.7
V
1400
ns
9
µC
Marking
K3563
※
TYPE
※ Lot Number
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2003-01-27
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