TH58NVG1S3AFT05 데이터 시트보기 (PDF) - Unspecified

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TH58NVG1S3AFT05

2GBIT (256M u 8BITS) CMOS NAND E2PROM

Unspecified 

AC TEST CONDITIONS

PARAMETER

Input level

Input pulse rise and fall time

Input comparison level

Output data comparison level

Output load

TH58NVG1S3AFT05

CONDITION

2.4 V, 0.4 V

3ns

1.5 V, 1.5 V

1.5 V, 1.5 V

CL (100 pF)  1 TTL

PROGRAMMING AND ERASING CHARACTERISTICS

(Ta 0 to 70℃, VCC 2.7V ~ 3.6V)

SYMBOL

PARAMETER

MIN

tPROG

Average Programming Time



Number of Programming Cycles on Same Page

N



(per 512+16 bytes)

tBERASE Block Erasing Time



(1) Refer to Application Note (12) toward the end of this document.

TYP.

200



2

MAX

700

2

4

UNIT NOTES

Ps

(1)

ms

2003-05-19A 5/32

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