TH58NVG1S3AFT05 데이터 시트보기 (PDF) - Unspecified

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TH58NVG1S3AFT05

2GBIT (256M u 8BITS) CMOS NAND E2PROM

Unspecified 

Auto Page Program Operation

TH58NVG1S3AFT05

The device carries out an Automatic Page Program operation when it receives a "10H" Program command

after the address and data have been input. The sequence of command, address and data input is shown below.

(Refer to the detailed timing chart.)

CLE

/CE

/WE

ALE

RE

RY / BY

80H

I/O

Din Din Din

Din 10h

70h Status

Out

Col. M Page P

Data

Data input

Program

Selected

page

Reading & verification

The data is transferred (programmed) from the register to

the selected page on the rising edge of WE following input of

the “ 10H command. After programming, the programmed data

is transferred back to the register to be automatically verified

by the device. If the programming does not succeed, the

Program/Verify operation is repeated by the device until

success is achieved or until the maximum loop number set in

the device is reached.

Figure 7. Auto Page Program operation

Auto Block Erase

The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “DOH”

which follows the Erase Setup command "60H". This three-cycle process for Erase operations acts as an extra

layer of protection from accidental erasure of data due to external noise. The device automatically executes the

Erase and Verify operations.

RY / BY

60

Block Address

input : 3 cycles

D0

Erase Start

command

Busy

70

Status Read

command

Pass

I/O

Fail

2003-05-19A 19/32

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