2SC5591 데이터 시트보기 (PDF) - Unspecified
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2SC5591 Datasheet PDF : 1 Pages
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Power Transistors
2SC5591
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
• High breakdown voltage: 1 700 V; supporting a large screen CRT
and wider visible angle
• High-speed switching: tf < 0.2 µs
• Low Collector to emitter saturation voltage: VCE(sat) < 3 V
• Wide area of safe operation (ASO)
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
1 700
V
Collector to emitter voltage
VCES
1 700
V
VCEO
600
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Base current
IB
11
A
Collector power TC = 25°C
PC
70
W
dissipation
Ta = 25°C
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
5˚
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Marking Symbol: C5591
Internal Connection
C
B
E
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 10 A
IC = 10 A, IB = 2.5 A
IC = 10 A, IB = 2.5 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 10 A, Resistance loaded
IB1 = 2.5 A, IB2 = −5.0 A
Min Typ Max Unit
50
µA
1
mA
50
µA
6
12
3
V
1.5
V
3
MHz
3.0
µs
0.2
µs
1
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