AP40T03S/P
12
I D =18A
10000
9
V DS =10V
V DS =15V
1000
V DS =20V
6
100
3
f=1.0MHz
Ciss
Coss
Crss
0
0
3
6
9
12
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10
1
8
15
22
29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
Tj=150 o C
1
Tj=25 o C
0.1
0
0.4
0.8
1.2
1.6
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
2.5
2
1.5
1
0.5
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature